Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W.
SiGe heterojunction bipolar transistors on insulator
At Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States.
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This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
Conference or Workshop Item
||Event Dates: March 2001 Organisation: Electrochemical Society
|Venue - Dates:
||Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States, 2001-03-01
||Nanoelectronics and Nanotechnology
||05 Jan 2004
||17 Apr 2017 23:14
|Further Information:||Google Scholar|
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