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SiGe heterojunction bipolar transistors on insulator

Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator At Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States. , pp. 433-444.

Record type: Conference or Workshop Item (Other)

Abstract

This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.

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More information

Published date: March 2001
Additional Information: Event Dates: March 2001 Organisation: Electrochemical Society
Venue - Dates: Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States, 2001-03-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 254722
URI: http://eprints.soton.ac.uk/id/eprint/254722
ISBN: 1-56677-309-1
PURE UUID: 0944782a-8905-4310-99e4-e03c5e6002d6

Catalogue record

Date deposited: 05 Jan 2004
Last modified: 18 Jul 2017 09:52

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Contributors

Author: P. Ashburn
Author: H.A.W.El Mubarek
Author: J.M. Bonar
Author: W. Redman-White

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