The University of Southampton
University of Southampton Institutional Repository

SiGe heterojunction bipolar transistors on insulator

SiGe heterojunction bipolar transistors on insulator
SiGe heterojunction bipolar transistors on insulator
This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
1-56677-309-1
433-444
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mubarek, H.A.W.El
1751dd7c-cec8-451e-9134-4e310f9eb520
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mubarek, H.A.W.El
1751dd7c-cec8-451e-9134-4e310f9eb520
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf

Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator. Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States. pp. 433-444 .

Record type: Conference or Workshop Item (Other)

Abstract

This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.

Full text not available from this repository.

More information

Published date: March 2001
Additional Information: Event Dates: March 2001 Organisation: Electrochemical Society
Venue - Dates: Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, United States, 2001-03-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 254722
URI: https://eprints.soton.ac.uk/id/eprint/254722
ISBN: 1-56677-309-1
PURE UUID: 0944782a-8905-4310-99e4-e03c5e6002d6

Catalogue record

Date deposited: 05 Jan 2004
Last modified: 18 Jul 2017 09:52

Export record

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×