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Characterisation of npn and pnp SiGe HBTs formed by Ge implantation

Characterisation of npn and pnp SiGe HBTs formed by Ge implantation
Characterisation of npn and pnp SiGe HBTs formed by Ge implantation
This work compares NPN and PNP SiGe HBTs fabricated simultaneously using Ge+ implantation in the base to achieve an average Ge concentration of 4at.%. Electrical measurements are presented and discussed with TEM and SIMS analysis. The results show that the PNP HBTs give superior performance to the NPNs, as they have more ideal collector characteristics. The NPN HBTs exhibit collector-emitter leakage. Both types of Ge+ implanted device have non-ideal base currents. TEM images show that both NPN and PNP devices have a high density of defects in the Ge+ implanted area. The electrical results are explained by the opposing effect of the Ge+ implant on the diffusion coefficients of boron and arsenic, as seen in the SIMS profiles. The increased emitter diffusion in the NPN HBTs creates a narrower base region, which is more prone to collector-emitter leakage. The hairpin dislocations in the base are thought to be the cause of the base current ideality deterioration.
254-259
Mitchell, M.
79fd3d5f-d070-4512-b583-2fbdb4519fad
Nigrin, S.
b1d7dbaa-8740-40bd-8e16-8370d55948fb
Cristiano, F.
7410e8d7-50f3-452f-90f7-110d4303edfb
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hemment, P.
fc110118-1ce0-4c91-82d8-e310a3f5bc3c
Mitchell, M.
79fd3d5f-d070-4512-b583-2fbdb4519fad
Nigrin, S.
b1d7dbaa-8740-40bd-8e16-8370d55948fb
Cristiano, F.
7410e8d7-50f3-452f-90f7-110d4303edfb
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hemment, P.
fc110118-1ce0-4c91-82d8-e310a3f5bc3c

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, P. (1999) Characterisation of npn and pnp SiGe HBTs formed by Ge implantation At Proceedings of IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. , pp. 254-259.

Record type: Conference or Workshop Item (Other)

Abstract

This work compares NPN and PNP SiGe HBTs fabricated simultaneously using Ge+ implantation in the base to achieve an average Ge concentration of 4at.%. Electrical measurements are presented and discussed with TEM and SIMS analysis. The results show that the PNP HBTs give superior performance to the NPNs, as they have more ideal collector characteristics. The NPN HBTs exhibit collector-emitter leakage. Both types of Ge+ implanted device have non-ideal base currents. TEM images show that both NPN and PNP devices have a high density of defects in the Ge+ implanted area. The electrical results are explained by the opposing effect of the Ge+ implant on the diffusion coefficients of boron and arsenic, as seen in the SIMS profiles. The increased emitter diffusion in the NPN HBTs creates a narrower base region, which is more prone to collector-emitter leakage. The hairpin dislocations in the base are thought to be the cause of the base current ideality deterioration.

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More information

Published date: 1999
Venue - Dates: Proceedings of IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 255697
URI: http://eprints.soton.ac.uk/id/eprint/255697
PURE UUID: f49eff68-8e76-4d3e-9b7e-7252ca9edad5

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Date deposited: 02 Apr 2001
Last modified: 18 Jul 2017 09:51

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Contributors

Author: M. Mitchell
Author: S. Nigrin
Author: F. Cristiano
Author: P. Ashburn
Author: P. Hemment

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