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A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation

Record type: Conference or Workshop Item (Other)

A study is made of npn and pnp SiGe HBTs produced using Ge implantation. The Ge is implanted into a complementary bipolar process after active area definition. Increased collector currents are observed in both npn and pnp transistors due to the presence of the Ge. The implanted Ge has opposing effects on the emitter dopant diffusion: increasing the arsenic diffusion coefficient in the npn devices and decreasing the boron diffusion coefficient in the pnp devices.

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Citation

Mitchell, M., Ashburn, P., Graoui, H., Hemment, P.L.F., Lamb, A., Hall, S. and Nigrin, S. (2000) A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation At Proceedings of 30th European Solid State Device Research Conference. , pp. 248-251.

More information

Published date: September 2000
Venue - Dates: Proceedings of 30th European Solid State Device Research Conference, 2000-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 255698
URI: http://eprints.soton.ac.uk/id/eprint/255698
PURE UUID: b8fb6d82-7fd5-4bed-a6fd-2d56ad8f1727

Catalogue record

Date deposited: 02 Apr 2001
Last modified: 18 Jul 2017 09:51

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Contributors

Author: M. Mitchell
Author: P. Ashburn
Author: H. Graoui
Author: P.L.F. Hemment
Author: A. Lamb
Author: S. Hall
Author: S. Nigrin

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