D'Halleweyn, N., Swanenberg, M., Benson, James and Redman White, W. (1999) A Circuit Simulation Model for Silicon-on-Insulator LDMOS Transistors, with accurate Simulation of High Side Behaviour. IEEE Engineering Academic Outreach - Device Research Symposium, Charlottesville, Virginia. pp. 195-199 .
Record type:
Conference or Workshop Item
(Paper)
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Published date: December 1999
Venue - Dates:
IEEE Engineering Academic Outreach - Device Research Symposium, Charlottesville, Virginia, 1999-12-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 255701
URI: http://eprints.soton.ac.uk/id/eprint/255701
ISBN: 1-880920-06-9
PURE UUID: 17d64d31-b84e-4e07-9b37-ab59506fe0f3
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Date deposited: 03 Sep 2004
Last modified: 10 Dec 2021 20:38
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Contributors
Author:
N. D'Halleweyn
Author:
M. Swanenberg
Author:
James Benson
Author:
W. Redman White
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