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A novel area efficient floating field limiting ring edge termination technique

A novel area efficient floating field limiting ring edge termination technique
A novel area efficient floating field limiting ring edge termination technique
In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure.
0038-1101
1381-1386
De Souza, M.M.
69b9febd-0e81-44d6-b461-a181382fdb0b
Subhas Chandra Bose, J.V.
74cb9b06-cf6e-4b63-8fa9-9929285b213b
Sankara Narayanan, E.M.
bc0706bf-094a-4316-86d0-d56b175991d5
Pease, T.J.
52224e75-1baa-4bf1-84ca-ccef4ba18ae4
Ensell, G.J.
05e24f49-3922-4e5f-9aee-1e6078650579
Humphry, J.
65a433ea-5bc1-42de-87ee-e38868b0f420
De Souza, M.M.
69b9febd-0e81-44d6-b461-a181382fdb0b
Subhas Chandra Bose, J.V.
74cb9b06-cf6e-4b63-8fa9-9929285b213b
Sankara Narayanan, E.M.
bc0706bf-094a-4316-86d0-d56b175991d5
Pease, T.J.
52224e75-1baa-4bf1-84ca-ccef4ba18ae4
Ensell, G.J.
05e24f49-3922-4e5f-9aee-1e6078650579
Humphry, J.
65a433ea-5bc1-42de-87ee-e38868b0f420

De Souza, M.M., Subhas Chandra Bose, J.V., Sankara Narayanan, E.M., Pease, T.J., Ensell, G.J. and Humphry, J. (2000) A novel area efficient floating field limiting ring edge termination technique. Solid-State Electronics, 44 (8), 1381-1386.

Record type: Article

Abstract

In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure.

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Published date: August 2000

Identifiers

Local EPrints ID: 255762
URI: http://eprints.soton.ac.uk/id/eprint/255762
ISSN: 0038-1101
PURE UUID: b9d01536-7842-4380-b08d-4965da8f1330

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Date deposited: 01 May 2001
Last modified: 14 Mar 2024 05:34

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Contributors

Author: M.M. De Souza
Author: J.V. Subhas Chandra Bose
Author: E.M. Sankara Narayanan
Author: T.J. Pease
Author: G.J. Ensell
Author: J. Humphry

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