Si0.64Ge0.36/Si heterojunction MOSFETS: design and evaluation
Si0.64Ge0.36/Si heterojunction MOSFETS: design and evaluation
Incorporation of pseudomorphic SiGe layers into Si CMOS has prospects of improving the hole channel mobility to match that of the bulk silicon electron channel. Current 0.25 µm MOS technologies require sheet densities around 1013 cm-2. this requires a Si capping layer thickness of ~ 2nm between the Si0.64Ge0.36 channel and the gate oxide.
Braithwaite, G.
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Grasbuy, T.J.
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Palmer, M.J.
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Prest, M.J.
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Parry, C.
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Whall, T.E.
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Parker, E.H.C.
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Waite, A.W.
73ece374-d86b-4797-abff-3ad4ce646e41
1 May 2001
Braithwaite, G.
e398b9b0-9923-47a4-803e-f64d204f4e69
Grasbuy, T.J.
934777a9-21d0-4ade-a12e-d8071441ddfa
Palmer, M.J.
dfaee826-0401-4b8e-bfde-c5653127d8e1
Prest, M.J.
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Parry, C.
4997087f-4955-4069-b88a-abcdcc14be67
Whall, T.E.
875dbadb-3f0d-4706-8496-19c5ab15e162
Parker, E.H.C.
e64c94b4-1029-4f6d-9ff2-6d305907f79c
Waite, A.W.
73ece374-d86b-4797-abff-3ad4ce646e41
Braithwaite, G., Grasbuy, T.J., Palmer, M.J., Prest, M.J., Parry, C., Whall, T.E., Parker, E.H.C. and Waite, A.W.
(2001)
Si0.64Ge0.36/Si heterojunction MOSFETS: design and evaluation.
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Conference or Workshop Item
(Paper)
Abstract
Incorporation of pseudomorphic SiGe layers into Si CMOS has prospects of improving the hole channel mobility to match that of the bulk silicon electron channel. Current 0.25 µm MOS technologies require sheet densities around 1013 cm-2. this requires a Si capping layer thickness of ~ 2nm between the Si0.64Ge0.36 channel and the gate oxide.
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Published date: 1 May 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 255766
URI: http://eprints.soton.ac.uk/id/eprint/255766
PURE UUID: 1d6adb49-1830-4da7-b33a-54b6c14a16db
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Date deposited: 01 May 2001
Last modified: 11 Dec 2021 19:07
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Contributors
Author:
G. Braithwaite
Author:
T.J. Grasbuy
Author:
M.J. Palmer
Author:
M.J. Prest
Author:
C. Parry
Author:
T.E. Whall
Author:
E.H.C. Parker
Author:
A.W. Waite
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