Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane


Waite, A M, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane Default journal

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 255769
Date :
Date Event
1994Published
Date Deposited: 01 May 2001
Last Modified: 17 Apr 2017 23:14
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/255769

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