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Indication of non-equilibrium transport in SiGe pMOSFETs

Indication of non-equilibrium transport in SiGe pMOSFETs
Indication of non-equilibrium transport in SiGe pMOSFETs
IEEE
Zhao, Z
abe04e3a-01ec-4488-8c57-62543ac8109d
Kaya, S
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Watling, J
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Asenov, A
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Barker, J
154373ba-04e8-411d-9513-1acbc953ee72
Palmer, M
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Braithwaite, G
e398b9b0-9923-47a4-803e-f64d204f4e69
Whall, T
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Parker, E
c401b38c-71e9-4744-b323-9e856d122c2e
Waite, A
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Evans, A G R
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Zhao, Z
abe04e3a-01ec-4488-8c57-62543ac8109d
Kaya, S
f8086797-7081-4e66-aa99-36c51913e744
Watling, J
e26dc1c6-6160-40c6-92ab-0a2d6787499c
Asenov, A
0c4a44b6-b45c-445c-841c-7294dfd67205
Barker, J
154373ba-04e8-411d-9513-1acbc953ee72
Palmer, M
36e4ea9d-4598-4df0-9222-8b80da92a724
Braithwaite, G
e398b9b0-9923-47a4-803e-f64d204f4e69
Whall, T
e842cd5d-3228-4a20-929d-cda68c6ef5d0
Parker, E
c401b38c-71e9-4744-b323-9e856d122c2e
Waite, A
01666e1d-ef61-4f3a-938f-722c5b7fdef9
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311

Zhao, Z, Kaya, S, Watling, J, Asenov, A, Barker, J, Palmer, M, Braithwaite, G, Whall, T, Parker, E, Waite, A and Evans, A G R (2000) Indication of non-equilibrium transport in SiGe pMOSFETs. In 30th European Solid-State Device Research Conference. IEEE.. (doi:10.1109/ESSDERC.2000.194755).

Record type: Conference or Workshop Item (Paper)

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More information

Published date: 2000
Additional Information: Organisation: ESSDERC 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 255770
URI: http://eprints.soton.ac.uk/id/eprint/255770
PURE UUID: a4ded8b8-446c-49d7-be33-3a109bad5c6a

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Date deposited: 05 Jul 2001
Last modified: 15 Mar 2024 22:36

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Contributors

Author: Z Zhao
Author: S Kaya
Author: J Watling
Author: A Asenov
Author: J Barker
Author: M Palmer
Author: G Braithwaite
Author: T Whall
Author: E Parker
Author: A Waite
Author: A G R Evans

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