SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide


Sidek, R M, Straube, U N, Waite, A M, Evans, A G R, Parry, C, Phillips, P, Whall, T E and Parker, E H C (2000) SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide Semiconductor Science and Technology, 15, pp. 135-138.

Download

Full text not available from this repository.

Item Type: Article
ISSNs: 0268-1242 (print)
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 255771
Date :
Date Event
2000Published
Date Deposited: 01 May 2001
Last Modified: 17 Apr 2017 23:14
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/255771

Actions (login required)

View Item View Item