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SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide

Sidek, R M, Straube, U N, Waite, A M, Evans, A G R, Parry, C, Phillips, P, Whall, T E and Parker, E H C (2000) SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide Semiconductor Science and Technology, 15, pp. 135-138.

Record type: Article

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Published date: 2000
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 255771
ISSN: 0268-1242
PURE UUID: 57920542-2e61-493e-8c3c-6969a5e04dd1

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Date deposited: 01 May 2001
Last modified: 18 Jul 2017 09:51

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Author: R M Sidek
Author: U N Straube
Author: A M Waite
Author: A G R Evans
Author: C Parry
Author: P Phillips
Author: T E Whall
Author: E H C Parker

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