Silicon on Insulator Power Integrated Circuits
Silicon on Insulator Power Integrated Circuits
A power integrated circuit process has been developed, based on silicon-on-insulator, which allows intelligent CMOS control circuitry to be placed alongside integrated high-voltage power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 μm thickness together with a buried oxide layer of 3 μm thickness. The respective LDMOS specific on-resistance and LIGBT on-state voltage for this breakdown voltage were 148 mΩ cm2 and 3.9 V, respectively.
517
Garner, D M
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Udrea, F
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Lim, H T
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Ensell, G J
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Popescu, A E
dec8ad38-0ade-431c-b290-6088447b1daf
Sheng, K
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Milne, W I
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2000
Garner, D M
b97aa0fc-757e-4345-ad91-c58031befb40
Udrea, F
2b9bce79-d629-4473-a186-eb18ad21c203
Lim, H T
f055df2a-8a9c-4ea6-b224-cfb62768dc7d
Ensell, G J
05e24f49-3922-4e5f-9aee-1e6078650579
Popescu, A E
dec8ad38-0ade-431c-b290-6088447b1daf
Sheng, K
77382177-f31c-43ff-825d-6ce7ac0147fd
Milne, W I
f0f1ecc1-8eb9-449d-ab96-f196c1a5e40c
Garner, D M, Udrea, F, Lim, H T, Ensell, G J, Popescu, A E, Sheng, K and Milne, W I
(2000)
Silicon on Insulator Power Integrated Circuits.
Microelectronics Journal, 32 (5-6), .
Abstract
A power integrated circuit process has been developed, based on silicon-on-insulator, which allows intelligent CMOS control circuitry to be placed alongside integrated high-voltage power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 μm thickness together with a buried oxide layer of 3 μm thickness. The respective LDMOS specific on-resistance and LIGBT on-state voltage for this breakdown voltage were 148 mΩ cm2 and 3.9 V, respectively.
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More information
Published date: 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 255778
URI: http://eprints.soton.ac.uk/id/eprint/255778
ISSN: 0026-2692
PURE UUID: e79a4c1d-04d7-40f7-a78f-98adfb1c98b3
Catalogue record
Date deposited: 02 May 2001
Last modified: 07 Jan 2022 21:09
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Contributors
Author:
D M Garner
Author:
F Udrea
Author:
H T Lim
Author:
G J Ensell
Author:
A E Popescu
Author:
K Sheng
Author:
W I Milne
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