Physics and Compact Modeling of SOI substrates with Buried Ground Planes (GPSOI) for Substrate Noise Suppression

Stefanou, S., Hamel, J.S., Bain, M., Baine, P., Armstrong, B. M., Gamble, H. S., Mauntel, Rick and Huang, Margaret (2001) Physics and Compact Modeling of SOI substrates with Buried Ground Planes (GPSOI) for Substrate Noise Suppression.

Abstract

The physical mechanisms responsible for superior cross-talk suppression are identified in a new class of silicon-on-insulator substrate (GPSOI) that incorporates a buried metallic ground plane below the active silicon and buried oxide layers. It has been shown [1] that this technology exhibits a factor of ten reduction in cross-talk power between components through the substrate compared to existing state-of-the-art silicon-based substrates using standard s21 magnitude measurements in a microwave coplanar transmission test structure. The dominant cross-talk mechanisms are identified and compared to other existing cross-talk suppression technologies using numerical electro-magnetic simulations and lumped element compact model development.

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