Technical Note on the Mobility Extraction for HMOSFETs
Technical Note on the Mobility Extraction for HMOSFETs
Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.
Straube, U. N.
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Evans, A. G. R.
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Braithwaite, G.
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Kaya, S.
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Watling, J.
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Asenov, A.
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2001
Straube, U. N.
ae1f2f4c-8c92-42fc-82af-cc710a6ffe9e
Evans, A. G. R.
7dea6382-c4be-47e9-9a3e-04034e5f3673
Braithwaite, G.
da0a82b0-bbfa-4897-8093-e0bcafee4edd
Kaya, S.
d021ecab-f553-4f79-b616-6cd472e467f3
Watling, J.
9a948dd5-dbca-41e0-aa13-6456faca106c
Asenov, A.
0c4a44b6-b45c-445c-841c-7294dfd67205
Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A.
(2001)
Technical Note on the Mobility Extraction for HMOSFETs.
Abstract
Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.
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Published date: 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256173
URI: http://eprints.soton.ac.uk/id/eprint/256173
PURE UUID: 176f93ef-71cf-43f1-a505-550ba52b18f5
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Date deposited: 11 Dec 2001
Last modified: 10 Dec 2021 20:42
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Contributors
Author:
U. N. Straube
Author:
A. G. R. Evans
Author:
G. Braithwaite
Author:
S. Kaya
Author:
J. Watling
Author:
A. Asenov
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