Technical Note on the Mobility Extraction for HMOSFETs

Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs


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Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.

Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 256173
Date :
Date Event
Date Deposited: 11 Dec 2001
Last Modified: 17 Apr 2017 23:08
Further Information:Google Scholar

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