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Technical Note on the Mobility Extraction for HMOSFETs

Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs

Record type: Other

Abstract

Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.

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More information

Published date: 2001
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256173
URI: http://eprints.soton.ac.uk/id/eprint/256173
PURE UUID: 176f93ef-71cf-43f1-a505-550ba52b18f5

Catalogue record

Date deposited: 11 Dec 2001
Last modified: 18 Jul 2017 09:48

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Contributors

Author: U. N. Straube
Author: A. G. R. Evans
Author: G. Braithwaite
Author: S. Kaya
Author: J. Watling
Author: A. Asenov

University divisions

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