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Technical Note on the Mobility Extraction for HMOSFETs

Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs

Record type: Other


Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.

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Published date: 2001
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 256173
PURE UUID: 176f93ef-71cf-43f1-a505-550ba52b18f5

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Date deposited: 11 Dec 2001
Last modified: 18 Jul 2017 09:48

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Author: U. N. Straube
Author: A. G. R. Evans
Author: G. Braithwaite
Author: S. Kaya
Author: J. Watling
Author: A. Asenov

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