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A Charge Model for SOI LDMOST with Lateral Doping Gradient

A Charge Model for SOI LDMOST with Lateral Doping Gradient
A Charge Model for SOI LDMOST with Lateral Doping Gradient
In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region and the overlap of the front gate over the drift region. The model has been implemented in SPICE3f5 and capacitance measurements are shown to agree well with the simulations.
291-294
D'Halleweyn, N. V.
813f4d26-2082-4c53-9d75-0c75fb5f1cd7
Tiemeijer, L. F.
f5504c6e-21eb-4f07-bed2-4230cdb96afa
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
D'Halleweyn, N. V.
813f4d26-2082-4c53-9d75-0c75fb5f1cd7
Tiemeijer, L. F.
f5504c6e-21eb-4f07-bed2-4230cdb96afa
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf

D'Halleweyn, N. V., Tiemeijer, L. F., Benson, J. and Redman-White, W. (2001) A Charge Model for SOI LDMOST with Lateral Doping Gradient. Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Osaka, Japan. pp. 291-294 . (doi:10.1109/ISPSD.2001.934612).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region and the overlap of the front gate over the drift region. The model has been implemented in SPICE3f5 and capacitance measurements are shown to agree well with the simulations.

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More information

Published date: 2001
Additional Information: Event Dates: June 2001
Venue - Dates: Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Osaka, Japan, 2001-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256309
URI: http://eprints.soton.ac.uk/id/eprint/256309
PURE UUID: 797e8359-2707-4a2a-8c57-54d9e50038ab

Catalogue record

Date deposited: 07 Feb 2002
Last modified: 14 Mar 2024 05:41

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Contributors

Author: N. V. D'Halleweyn
Author: L. F. Tiemeijer
Author: J. Benson
Author: W. Redman-White

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