The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films
The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films
A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported.
6182-6189
Anteney, I.M.
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Parker, G.J.
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Ashburn, P.
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Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b
December 2001
Anteney, I.M.
baf25438-c635-4a75-a4c9-e7c0e2e84050
Parker, G.J.
0be0b760-c634-410d-adf6-076c6636be7e
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b
Anteney, I.M., Parker, G.J., Ashburn, P. and Kemhadjian, H.A.
(2001)
The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films.
Journal of Applied Physics, 90 (12), .
Abstract
A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported.
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2001_Anteney_poly_SiGeC.pdf
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Published date: December 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256473
URI: http://eprints.soton.ac.uk/id/eprint/256473
ISSN: 0021-8979
PURE UUID: 51a18bac-c357-43a2-9baa-a7977184a18d
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Date deposited: 22 Dec 2003
Last modified: 14 Mar 2024 05:43
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Contributors
Author:
I.M. Anteney
Author:
G.J. Parker
Author:
H.A. Kemhadjian
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