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Adverse effect of Ge+ implantation for fabrication of SiGe PMOS

Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F. (2001) Adverse effect of Ge+ implantation for fabrication of SiGe PMOS Electronics Letters, 37, (25)

Record type: Article


SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed

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Published date: December 2001
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 256485
ISSN: 0013-5194
PURE UUID: 6cf3ce47-68da-408e-acad-5dd3f54f6dca

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Date deposited: 05 Apr 2002
Last modified: 18 Jul 2017 09:46

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Author: U.N. Straube
Author: A.M. Waite
Author: A.G.R. Evans
Author: A. Nejim
Author: P.L.F. Hemment

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