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Room temperature polariton lasers based on GaN microcavities

Room temperature polariton lasers based on GaN microcavities
Room temperature polariton lasers based on GaN microcavities
The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T = 460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.
0003-6951
412-414
Malpuech, G.
da5f02e8-b721-4a4b-a3fc-cb756b396e4a
Di Carlo, A.
23e68b02-6ca1-4d4d-a0b5-7cf2f8cf9415
Kavokin, A.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Zamfirescu, M.
fd5c8daf-395b-4831-901b-25bee04f75c2
Lugli, P.
c05ee1c6-28d5-448c-ae35-e0c0aefa9bda
Malpuech, G.
da5f02e8-b721-4a4b-a3fc-cb756b396e4a
Di Carlo, A.
23e68b02-6ca1-4d4d-a0b5-7cf2f8cf9415
Kavokin, A.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Zamfirescu, M.
fd5c8daf-395b-4831-901b-25bee04f75c2
Lugli, P.
c05ee1c6-28d5-448c-ae35-e0c0aefa9bda

Malpuech, G., Di Carlo, A., Kavokin, A., Baumberg, J.J., Zamfirescu, M. and Lugli, P. (2002) Room temperature polariton lasers based on GaN microcavities. Applied Physics Letters, 81 (3), 412-414. (doi:10.1063/1.1494126).

Record type: Article

Abstract

The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T = 460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.

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Published date: 15 July 2002

Identifiers

Local EPrints ID: 256685
URI: http://eprints.soton.ac.uk/id/eprint/256685
ISSN: 0003-6951
PURE UUID: 53ab29c8-53e9-428f-b6f6-14ea3a5af62b

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Date deposited: 18 Jul 2002
Last modified: 25 Nov 2021 20:55

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Contributors

Author: G. Malpuech
Author: A. Di Carlo
Author: A. Kavokin
Author: J.J. Baumberg
Author: M. Zamfirescu
Author: P. Lugli

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