Room temperature polariton lasers based on GaN microcavities

Malpuech, G., Di Carlo, A., Kavokin, A., Baumberg, J.J., Zamfirescu, M. and Lugli, P. (2002) Room temperature polariton lasers based on GaN microcavities Applied Physics Letters, 81, (3), pp. 412-414. (doi:10.1063/1.1494126).


[img] PDF APL02_GaNpolaritonlaser.pdf - Version of Record
Restricted to Registered users only

Download (181kB)


The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T = 460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.1494126
ISSNs: 0003-6951 (print)
Related URLs:
ePrint ID: 256685
Date :
Date Event
15 July 2002Published
Date Deposited: 18 Jul 2002
Last Modified: 17 Apr 2017 23:01
Further Information:Google Scholar

Actions (login required)

View Item View Item