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Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities

Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
Angular-dependent emission spectra are investigated in a strongly coupled InGaAs-GaAs-AlAs-based semiconductor microcavity as a function of excitation intensity and of detuning between the uncoupled exciton and photon modes. Under conditions of nonresonant excitation, it is shown that the onset of stimulated emission always occurs in the weak coupling regime. Angular-dependent studies show that the transition to weak coupling occurs when the linewidth of high k excitons becomes of the order of the normal mode splitting of the exciton-polariton coupled modes. We conclude that, under nonresonant excitation, ‘‘polariton lasing,’’ where stimulated polariton scattering followed by photon emission occurs in the strong coupling regime, is only likely to be achieved in systems with larger exciton binding energy than in GaAs-based structures or possibly also in GaAs microcavities containing excess concentrations of free electrons. The experimental results below threshold are found to be in good agreement with numerical solution of Boltzmann kinetic equations for the photoexcited polariton distribution.
205310-1
Butté, R.
77f41e56-4324-4494-b332-40c3a2e4872f
Delalleau, G
7952d54d-0b87-4251-a2a4-15c15e88feac
Tartakovskii, A.I.
7e3511c6-3557-44f6-b5c6-75b843668936
Skolnick, M.S.
f3155840-dc44-4f68-8329-a139a585cc6a
Astratov, V.N.
1f907bdb-c80e-4693-80bc-cf41934a3914
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Malpuech, G
ac6bdffc-6009-4159-8548-954c55e7ea6c
Di Carlo, A
3add0b14-b60b-4120-ab21-99a28e59818a
Kavokin, A.V.
4721b861-7a7c-4ae2-b49c-61e5cd376238
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Butté, R.
77f41e56-4324-4494-b332-40c3a2e4872f
Delalleau, G
7952d54d-0b87-4251-a2a4-15c15e88feac
Tartakovskii, A.I.
7e3511c6-3557-44f6-b5c6-75b843668936
Skolnick, M.S.
f3155840-dc44-4f68-8329-a139a585cc6a
Astratov, V.N.
1f907bdb-c80e-4693-80bc-cf41934a3914
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Malpuech, G
ac6bdffc-6009-4159-8548-954c55e7ea6c
Di Carlo, A
3add0b14-b60b-4120-ab21-99a28e59818a
Kavokin, A.V.
4721b861-7a7c-4ae2-b49c-61e5cd376238
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16

Butté, R., Delalleau, G, Tartakovskii, A.I., Skolnick, M.S., Astratov, V.N., Baumberg, J.J., Malpuech, G, Di Carlo, A, Kavokin, A.V. and Roberts, J.S. (2002) Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities. Physical Review B, 65 (205310), 205310-1.

Record type: Article

Abstract

Angular-dependent emission spectra are investigated in a strongly coupled InGaAs-GaAs-AlAs-based semiconductor microcavity as a function of excitation intensity and of detuning between the uncoupled exciton and photon modes. Under conditions of nonresonant excitation, it is shown that the onset of stimulated emission always occurs in the weak coupling regime. Angular-dependent studies show that the transition to weak coupling occurs when the linewidth of high k excitons becomes of the order of the normal mode splitting of the exciton-polariton coupled modes. We conclude that, under nonresonant excitation, ‘‘polariton lasing,’’ where stimulated polariton scattering followed by photon emission occurs in the strong coupling regime, is only likely to be achieved in systems with larger exciton binding energy than in GaAs-based structures or possibly also in GaAs microcavities containing excess concentrations of free electrons. The experimental results below threshold are found to be in good agreement with numerical solution of Boltzmann kinetic equations for the photoexcited polariton distribution.

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Published date: April 2002
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256687
URI: http://eprints.soton.ac.uk/id/eprint/256687
PURE UUID: 5d39c99b-11a7-4af2-b679-eae073ff2d82

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Date deposited: 19 Jul 2002
Last modified: 16 Jul 2019 22:58

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Contributors

Author: R. Butté
Author: G Delalleau
Author: A.I. Tartakovskii
Author: M.S. Skolnick
Author: V.N. Astratov
Author: J.J. Baumberg
Author: G Malpuech
Author: A Di Carlo
Author: A.V. Kavokin
Author: J.S. Roberts

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