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Polariton lasing by exciton-electron scattering in semiconductor microcavities

Malpuech, G, Kavokin, A, Di Carlo, A and Baumberg, J.J. (2002) Polariton lasing by exciton-electron scattering in semiconductor microcavities PHYSICAL REVIEW B,, 65, (153310), pp. 153310-1.

Record type: Article


The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electronpolariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.

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Published date: April 2002
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 256689
PURE UUID: 2054bf00-a47b-4ade-9791-4e2e699df8b2

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Date deposited: 18 Jul 2002
Last modified: 18 Jul 2017 09:44

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Author: G Malpuech
Author: A Kavokin
Author: A Di Carlo
Author: J.J. Baumberg

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