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Polariton lasing by exciton-electron scattering in semiconductor microcavities

Polariton lasing by exciton-electron scattering in semiconductor microcavities
Polariton lasing by exciton-electron scattering in semiconductor microcavities
The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electron-polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.
153310-[4pp]
Malpuech, G.
da5f02e8-b721-4a4b-a3fc-cb756b396e4a
Kavokin, A.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Di Carlo, A.
23e68b02-6ca1-4d4d-a0b5-7cf2f8cf9415
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Malpuech, G.
da5f02e8-b721-4a4b-a3fc-cb756b396e4a
Kavokin, A.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Di Carlo, A.
23e68b02-6ca1-4d4d-a0b5-7cf2f8cf9415
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07

Malpuech, G., Kavokin, A., Di Carlo, A. and Baumberg, J.J. (2002) Polariton lasing by exciton-electron scattering in semiconductor microcavities. Physical Review B, 65 (153310), 153310-[4pp]. (doi:10.1103/PhysRevB.65.153310).

Record type: Article

Abstract

The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electron-polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.

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Published date: April 2002
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256689
URI: http://eprints.soton.ac.uk/id/eprint/256689
PURE UUID: 2054bf00-a47b-4ade-9791-4e2e699df8b2

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Date deposited: 18 Jul 2002
Last modified: 25 Nov 2021 17:05

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Contributors

Author: G. Malpuech
Author: A. Kavokin
Author: A. Di Carlo
Author: J.J. Baumberg

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