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Gateable suppression of spin relaxation in semiconductor FETs

Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A. (2001) Gateable suppression of spin relaxation in semiconductor FETs Physical Review Letters, 86, (10), pp. 2150-2153. (doi:10.1103/PhysRevLett.86.2150).

Record type: Article


The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.

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Submitted date: 19 September 2000
Published date: March 2001
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 256694
ISSN: 1079-7114
PURE UUID: 9e5f30e1-484a-4e82-8778-72be25871f57

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Date deposited: 18 Jul 2002
Last modified: 18 Jul 2017 09:44

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Author: J.S. Sandhu
Author: A.P. Heberle
Author: J.J. Baumberg
Author: J.R.A. Cleaver

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