Gateable suppression of spin relaxation in semiconductor FETs
Gateable suppression of spin relaxation in semiconductor FETs
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
2150-2153
Sandhu, J.S.
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Heberle, A.P.
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Baumberg, J.J.
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Cleaver, J.R.A.
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March 2001
Sandhu, J.S.
b79a5839-20d8-4a80-a623-daad6097f361
Heberle, A.P.
0fd8af77-7331-4828-a442-707db2667588
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Cleaver, J.R.A.
19303891-8463-4930-a5b7-bf04ca5a471c
Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A.
(2001)
Gateable suppression of spin relaxation in semiconductor FETs.
Physical Review Letters, 86 (10), .
(doi:10.1103/PhysRevLett.86.2150).
Abstract
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
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PRL01_gatedspin.pdf
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Submitted date: 19 September 2000
Published date: March 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256694
URI: http://eprints.soton.ac.uk/id/eprint/256694
ISSN: 1079-7114
PURE UUID: 9e5f30e1-484a-4e82-8778-72be25871f57
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Date deposited: 18 Jul 2002
Last modified: 14 Mar 2024 05:47
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Contributors
Author:
J.S. Sandhu
Author:
A.P. Heberle
Author:
J.J. Baumberg
Author:
J.R.A. Cleaver
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