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Gateable suppression of spin relaxation in semiconductor FETs

Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A. (2001) Gateable suppression of spin relaxation in semiconductor FETs Physical Review Letters, 86, (10), pp. 2150-2153. (doi:10.1103/PhysRevLett.86.2150).

Record type: Article

Abstract

The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.

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More information

Submitted date: 19 September 2000
Published date: March 2001
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256694
URI: http://eprints.soton.ac.uk/id/eprint/256694
ISSN: 1079-7114
PURE UUID: 9e5f30e1-484a-4e82-8778-72be25871f57

Catalogue record

Date deposited: 18 Jul 2002
Last modified: 18 Jul 2017 09:44

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Contributors

Author: J.S. Sandhu
Author: A.P. Heberle
Author: J.J. Baumberg
Author: J.R.A. Cleaver

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