Gateable Suppression of Spin Relaxation in Semiconductors

Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A. (2001) Gateable Suppression of Spin Relaxation in Semiconductors PHYSICAL REVIEW LETTERS, 86, (10), pp. 2150-2153.


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The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spinrelaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.

Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 256694
Date :
Date Event
March 2001Published
Date Deposited: 18 Jul 2002
Last Modified: 17 Apr 2017 23:01
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