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Visible photonic band gap engineering in silicon nitride waveguides

Netti, M.C., Charlton, M.D.B., Parker, G.J. and Baumberg, J.J. (2000) Visible photonic band gap engineering in silicon nitride waveguides. Applied Physics Letters, 76 (8), 991-993.

Record type: Article

Abstract

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the -J direction. © 2000 American Institute of Physics. [S0003-6951(00)02008-8]

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Published date: February 2000

Related URLs:

http://ojps.aip.org/getpdf/ser...type=cvips

Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 256715

URI: http://eprints.soton.ac.uk/id/eprint/256715

PURE UUID: 28c2e3bf-3d70-46c9-b75d-9eecf835167a

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Date deposited: 04 Aug 2002

Last modified: 16 Jul 2019 22:58

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Contributors

Author: M.C. Netti

Author: M.D.B. Charlton

Author: G.J. Parker

Author: J.J. Baumberg

University divisions

Faculties (pre 2018 reorg) > Faculty of Physical Sciences and Engineering (pre 2018 reorg) > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
Current Faculties > Faculty of Engineering and Physical Sciences > School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)

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