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Visible photonic band gap engineering in silicon nitride waveguides

Netti, M.C., Charlton, M.D.B., Parker, G.J. and Baumberg, J.J. (2000) Visible photonic band gap engineering in silicon nitride waveguides Applied Physics Letters, 76, (8), pp. 991-993.

Record type: Article


We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the -J direction. © 2000 American Institute of Physics. [S0003-6951(00)02008-8]

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Published date: February 2000
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 256715
PURE UUID: 28c2e3bf-3d70-46c9-b75d-9eecf835167a

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Date deposited: 04 Aug 2002
Last modified: 18 Jul 2017 09:44

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Author: M.C. Netti
Author: M.D.B. Charlton
Author: G.J. Parker
Author: J.J. Baumberg

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