Ashburn, P (2002) Materials and technology issues for SiGe heterojunction bipolar transistors. Journal of Materials Science in Semiconductor Processing, 4 (6), 521-527.
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Published date: 2002
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 257502
URI: http://eprints.soton.ac.uk/id/eprint/257502
PURE UUID: 1e9594cd-62a5-45b6-9c21-4c04280a959f
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Date deposited: 28 May 2003
Last modified: 10 Dec 2021 20:51
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P Ashburn
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