Fabrication and evaluation of SiC optical modulators

Reed, G.T., Png, C.E., Mashanovich, G.Z., Chan, S., Lim, S.T., Vonsovici, A., Evans, A.G.R., Atta, R., Jackson, S.M., Way, A.S. and Kewell, A.K. (2002) Fabrication and evaluation of SiC optical modulators At SPIE 2002. , p. 145.


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Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C-SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC for photonics applications. In this paper we will discuss design and fabrication of both SiC waveguides and modulators for silicon based photonics. The fabrication process utilises ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators has been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: SPIE 2002, 2002-01-01
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Keywords: Si-based optoelectronics, silicon on insulator, SiC planar waveguides, SiC rib waveguides, modulators
ePrint ID: 257512
Date :
Date Event
Date Deposited: 29 May 2003
Last Modified: 10 May 2017 01:21
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/257512

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