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SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars

SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars
SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars
Straube, U N
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Waite, A M
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Lloyd, N S
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Croucher, S G
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Tang, Y T
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Evans, A G R
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Grasby, T J
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Myronov, M
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Whall, T E
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Parker, E H C
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Norris, D
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Cullis, T
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Straube, U N
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Waite, A M
d021f13b-f8dd-4398-89d1-bb9cf308072c
Lloyd, N S
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Croucher, S G
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Tang, Y T
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Evans, A G R
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Grasby, T J
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Myronov, M
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Whall, T E
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Parker, E H C
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Norris, D
dc28e673-e7d6-41d0-a31e-d160ca39bb61
Cullis, T
dee3a656-b91d-43ce-a269-dca6cf30b4a7

(2002) SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars. Straube, U N, Waite, A M, Lloyd, N S, Croucher, S G, Tang, Y T, Evans, A G R, Grasby, T J, Myronov, M, Whall, T E, Parker, E H C, Norris, D and Cullis, T (eds.) ESSDERC, Italy.

Record type: Conference or Workshop Item (Other)

Full text not available from this repository.

More information

Published date: 2002
Additional Information: Event Dates: 24-26th September
Venue - Dates: ESSDERC, Italy, 2002-09-25
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 257517
URI: http://eprints.soton.ac.uk/id/eprint/257517
PURE UUID: 954d4b67-0b03-4a0d-bc92-834f6ba3bc30

Catalogue record

Date deposited: 29 May 2003
Last modified: 29 Jan 2020 15:28

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Contributors

Editor: U N Straube
Editor: A M Waite
Editor: N S Lloyd
Editor: S G Croucher
Editor: Y T Tang
Editor: A G R Evans
Editor: T J Grasby
Editor: M Myronov
Editor: T E Whall
Editor: E H C Parker
Editor: D Norris
Editor: T Cullis

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