Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
444-448
Prest, M J
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Palmer, M J
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Grasby, T J
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Philips, P J
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Miranov, O A
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Parker, E H C
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Whall, T E
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Waite, A M
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Evans, A G R
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Watling, J R
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Asenov, A
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Barker, J R
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2002
Prest, M J
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Palmer, M J
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Grasby, T J
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Philips, P J
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Miranov, O A
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Parker, E H C
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Whall, T E
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Waite, A M
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Evans, A G R
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Watling, J R
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Asenov, A
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Barker, J R
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Prest, M J, Palmer, M J, Grasby, T J, Philips, P J, Miranov, O A, Parker, E H C, Whall, T E, Waite, A M, Evans, A G R, Watling, J R, Asenov, A and Barker, J R
(2002)
Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs.
Materials Science and Engineering: B, B89, .
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Published date: 2002
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 257801
URI: http://eprints.soton.ac.uk/id/eprint/257801
PURE UUID: 673e1796-2a44-4158-bf29-ae07cd6b0cef
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Date deposited: 26 Jun 2003
Last modified: 10 Dec 2021 20:52
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Contributors
Author:
M J Prest
Author:
M J Palmer
Author:
T J Grasby
Author:
P J Philips
Author:
O A Miranov
Author:
E H C Parker
Author:
T E Whall
Author:
A M Waite
Author:
A G R Evans
Author:
J R Watling
Author:
A Asenov
Author:
J R Barker
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