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Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
444-448
Prest, M J
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Palmer, M J
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Grasby, T J
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Philips, P J
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Miranov, O A
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Parker, E H C
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Whall, T E
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Waite, A M
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Evans, A G R
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Watling, J R
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Asenov, A
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Barker, J R
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Prest, M J
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Palmer, M J
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Grasby, T J
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Philips, P J
3dbd643e-53d9-4dbd-819b-4e84955c6419
Miranov, O A
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Parker, E H C
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Whall, T E
875dbadb-3f0d-4706-8496-19c5ab15e162
Waite, A M
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Evans, A G R
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Watling, J R
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Asenov, A
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Barker, J R
a06b2fd9-d7d0-4f53-a6dd-4afe3a9e6755

Prest, M J, Palmer, M J, Grasby, T J, Philips, P J, Miranov, O A, Parker, E H C, Whall, T E, Waite, A M, Evans, A G R, Watling, J R, Asenov, A and Barker, J R (2002) Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering: B, B89, 444-448.

Record type: Article

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More information

Published date: 2002
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 257801
URI: http://eprints.soton.ac.uk/id/eprint/257801
PURE UUID: 673e1796-2a44-4158-bf29-ae07cd6b0cef

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Date deposited: 26 Jun 2003
Last modified: 10 Dec 2021 20:52

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Contributors

Author: M J Prest
Author: M J Palmer
Author: T J Grasby
Author: P J Philips
Author: O A Miranov
Author: E H C Parker
Author: T E Whall
Author: A M Waite
Author: A G R Evans
Author: J R Watling
Author: A Asenov
Author: J R Barker

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