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Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Prest, M J, Palmer, M J, Grasby, T J, Philips, P J, Miranov, O A, Parker, E H C, Whall, T E, Waite, A M, Evans, A G R, Watling, J R, Asenov, A and Barker, J R (2002) Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs Materials Science and Engineering B, B89, pp. 444-448.

Record type: Article

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Published date: 2002
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 257801
PURE UUID: 673e1796-2a44-4158-bf29-ae07cd6b0cef

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Date deposited: 26 Jun 2003
Last modified: 18 Jul 2017 09:36

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Author: M J Prest
Author: M J Palmer
Author: T J Grasby
Author: P J Philips
Author: O A Miranov
Author: E H C Parker
Author: T E Whall
Author: A M Waite
Author: A G R Evans
Author: J R Watling
Author: A Asenov
Author: J R Barker

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