Ion-implantation and diffusion behaviour of boron in germanium
Ion-implantation and diffusion behaviour of boron in germanium
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10-16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.
germanium, boron, ion implantation, diffusion
525-528
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
2001
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G.
(2001)
Ion-implantation and diffusion behaviour of boron in germanium.
Physica B: Condensed Matter, 308-310, .
(doi:10.1016/S0921-4526(01)00752-9).
Abstract
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10-16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.
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Published date: 2001
Keywords:
germanium, boron, ion implantation, diffusion
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 257856
URI: http://eprints.soton.ac.uk/id/eprint/257856
ISSN: 0921-4526
PURE UUID: 07f1c16d-c025-40a2-9268-70518933810f
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Date deposited: 26 Jun 2003
Last modified: 14 Mar 2024 06:03
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Author:
Suresh Uppal
Author:
A.F.W. Willoughby
Author:
Janet M. Bonar
Author:
Alan G.R. Evans
Author:
Nick E.B. Cowern
Author:
Richard Morris
Author:
Mark G. Dowsett
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