Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G.
Ion-implantation and diffusion behaviour of boron in germanium
Physica B, 308, .
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Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3)x10-16/s at 850 degrees c has been extracted. This value is two orders of magnitude lower than previously reported vaues. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels.
||Germanium, Boron, Ion implantation, Diffusion
||Nanoelectronics and Nanotechnology
||26 Jun 2003
||17 Apr 2017 22:48
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