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Ion-implantation and diffusion behaviour of boron in germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Ion-implantation and diffusion behaviour of boron in germanium Physica B, 308, pp. 525-528.

Record type: Article


Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3)x10-16/s at 850 degrees c has been extracted. This value is two orders of magnitude lower than previously reported vaues. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels.

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Published date: 2001
Keywords: Germanium, Boron, Ion implantation, Diffusion
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 257856
PURE UUID: 07f1c16d-c025-40a2-9268-70518933810f

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Date deposited: 26 Jun 2003
Last modified: 18 Jul 2017 09:35

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Author: Suresh Uppal
Author: A.F.W. Willoughby
Author: Janet M. Bonar
Author: Alan G.R. Evans
Author: Nick E.B. Cowern
Author: Richard Morris
Author: Mark G. Dowsett

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