Diffusion of ion-implanted boron in germanium
Diffusion of ion-implanted boron in germanium
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)x10-16 cm2/s and 5.5(±1.0)x1018/cm3, respectively at 850 ºC by fitting experimentally obtained profiles. The value of diffusion coeffient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
Germanium, Boron, Ion implantation, Diffusion
4293-4295
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
October 2001
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G.
(2001)
Diffusion of ion-implanted boron in germanium.
Journal of Applied Physics, 90 (8), .
(doi:10.1063/1.1402664).
Abstract
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)x10-16 cm2/s and 5.5(±1.0)x1018/cm3, respectively at 850 ºC by fitting experimentally obtained profiles. The value of diffusion coeffient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
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Published date: October 2001
Keywords:
Germanium, Boron, Ion implantation, Diffusion
Identifiers
Local EPrints ID: 257858
URI: http://eprints.soton.ac.uk/id/eprint/257858
ISSN: 0021-8979
PURE UUID: 53bd12e1-75f1-4aa7-ba5d-3474754e731e
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Date deposited: 26 Jun 2003
Last modified: 14 Mar 2024 06:03
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Contributors
Author:
Suresh Uppal
Author:
Arthur F.W. Willoughby
Author:
Janet M. Bonar
Author:
Alan G.R. Evans
Author:
Nick E.B. Cowern
Author:
Richard Morris
Author:
Mark G. Dowsett
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