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Diffusion of ion-implanted boron in germanium

Diffusion of ion-implanted boron in germanium
Diffusion of ion-implanted boron in germanium
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x10-16 cm2/s and 5.5(+/-1.0)x1018/cm3, respectively at 850 degrees c by fitting experimentally obtained profiles. The value of diffusion coeffienc is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
Germanium, Boron, Ion implantation, Diffusion
0021-8979
4293-4295
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc

Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90 (8), 4293-4295. (doi:10.1063/1.1402664).

Record type: Article

Abstract

The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x10-16 cm2/s and 5.5(+/-1.0)x1018/cm3, respectively at 850 degrees c by fitting experimentally obtained profiles. The value of diffusion coeffienc is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.

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More information

Published date: October 2001
Keywords: Germanium, Boron, Ion implantation, Diffusion

Identifiers

Local EPrints ID: 257858
URI: http://eprints.soton.ac.uk/id/eprint/257858
ISSN: 0021-8979
PURE UUID: 53bd12e1-75f1-4aa7-ba5d-3474754e731e

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Date deposited: 26 Jun 2003
Last modified: 16 Jul 2019 22:56

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Contributors

Author: Suresh Uppal
Author: Arthur F.W. Willoughby
Author: Janet M. Bonar
Author: Alan G.R. Evans
Author: Nick E.B. Cowern
Author: Richard Morris
Author: Mark G. Dowsett

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