SiGe Heterojunction Bipolar Transistors
SiGe Heterojunction Bipolar Transistors
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.
0-470-84838-3
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2003
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Ashburn, P
(2003)
SiGe Heterojunction Bipolar Transistors
,
John Wiley & Sons Ltd.
Abstract
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.
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Published date: 2003
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258612
URI: http://eprints.soton.ac.uk/id/eprint/258612
ISBN: 0-470-84838-3
PURE UUID: 67e1d36d-d45b-43dd-83bf-b9ab1cb3e52c
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Date deposited: 06 Jan 2004
Last modified: 08 Mar 2024 17:44
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