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SiGe Heterojunction Bipolar Transistors

SiGe Heterojunction Bipolar Transistors
SiGe Heterojunction Bipolar Transistors
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.
0-470-84838-3
John Wiley & Sons
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Ashburn, P (2003) SiGe Heterojunction Bipolar Transistors , John Wiley & Sons

Record type: Book

Abstract

Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.

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More information

Published date: 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258612
URI: https://eprints.soton.ac.uk/id/eprint/258612
ISBN: 0-470-84838-3
PURE UUID: 67e1d36d-d45b-43dd-83bf-b9ab1cb3e52c

Catalogue record

Date deposited: 06 Jan 2004
Last modified: 18 Jul 2017 09:31

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