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Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2V and low reverse leakage current ~10(-7)A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 mn is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500K and shown to originate from recombination within the ZnO.
0003-6951
4719-4721
Alivov, Ya. I.
1242791a-7bce-4ef5-bdc3-f7c9c0d96a59
Kalinina, E.V.
5b0ce1b6-b0c9-4ab6-8c28-04d3b44a9a6a
Cherenkov, A.E.
9e88a1af-df35-4374-a397-f430006b523a
Look, D.C.
a56f443c-0821-410f-bf7f-aba739b679d7
Ataev, B.M.
6fdf6ff9-13d5-443a-b359-32d595d5342b
Omaev, A.K.
5c13cae6-a4e5-4d3b-ac41-b12fa27e8845
Chukichev, M.V.
f7a5600b-b39b-4b81-9c20-48cc2dfa5023
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Alivov, Ya. I.
1242791a-7bce-4ef5-bdc3-f7c9c0d96a59
Kalinina, E.V.
5b0ce1b6-b0c9-4ab6-8c28-04d3b44a9a6a
Cherenkov, A.E.
9e88a1af-df35-4374-a397-f430006b523a
Look, D.C.
a56f443c-0821-410f-bf7f-aba739b679d7
Ataev, B.M.
6fdf6ff9-13d5-443a-b359-32d595d5342b
Omaev, A.K.
5c13cae6-a4e5-4d3b-ac41-b12fa27e8845
Chukichev, M.V.
f7a5600b-b39b-4b81-9c20-48cc2dfa5023
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Alivov, Ya. I., Kalinina, E.V., Cherenkov, A.E., Look, D.C., Ataev, B.M., Omaev, A.K., Chukichev, M.V. and Bagnall, D.M. (2003) Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Applied Physics Letters, 83 (23), 4719-4721.

Record type: Article

Abstract

We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2V and low reverse leakage current ~10(-7)A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 mn is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500K and shown to originate from recombination within the ZnO.

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Published date: December 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258667
URI: https://eprints.soton.ac.uk/id/eprint/258667
ISSN: 0003-6951
PURE UUID: af5fdb79-29cf-4e31-ae42-446e3249cbf8

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Date deposited: 10 Dec 2003
Last modified: 18 Jul 2017 09:31

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Contributors

Author: Ya. I. Alivov
Author: E.V. Kalinina
Author: A.E. Cherenkov
Author: D.C. Look
Author: B.M. Ataev
Author: A.K. Omaev
Author: M.V. Chukichev
Author: D.M. Bagnall

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