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Confined epitaxial growth by low-pressure chemical vapor deposition

Confined epitaxial growth by low-pressure chemical vapor deposition
Confined epitaxial growth by low-pressure chemical vapor deposition
Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.
257-260
Osman, K
b3fd9dc3-67d9-4711-a78a-7241e6d05039
Lloyd, N S
b37aa9e7-e478-40a8-9dbc-a72c63257cbe
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Osman, K
b3fd9dc3-67d9-4711-a78a-7241e6d05039
Lloyd, N S
b37aa9e7-e478-40a8-9dbc-a72c63257cbe
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8

Osman, K, Lloyd, N S, Bonar, J M, Kemhadjian, H A, Bagnall, D M and Hamel, J S (2003) Confined epitaxial growth by low-pressure chemical vapor deposition. Journal of Materials Science: Materials in Electronics, 14, 257-260.

Record type: Article

Abstract

Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.

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More information

Published date: December 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258682
URI: http://eprints.soton.ac.uk/id/eprint/258682
PURE UUID: 739d70c1-af94-4972-b2a4-d994e917a4a6

Catalogue record

Date deposited: 15 Dec 2003
Last modified: 16 Jul 2019 22:54

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Contributors

Author: K Osman
Author: N S Lloyd
Author: J M Bonar
Author: H A Kemhadjian
Author: D M Bagnall
Author: J S Hamel

University divisions

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