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Current crowding effects in SOI-SiGe HBTs with low doped emitters

Current crowding effects in SOI-SiGe HBTs with low doped emitters
Current crowding effects in SOI-SiGe HBTs with low doped emitters
Anomalous limitation of collector and base current in SOI SiGe HBTs at moderate bias levels is shown to be the result of current crowding and associated high injection effects induced by emitter de-biasing in the low doped emitter rather than in the base as is the case for homojunction transistors. Experimental results from devices with decreasing emitter window dimension, re-enforced by 2-D simulation, show clearly a trend for crowding at the centre as the emitter resistance increases. The results have significance for achieving full optimisation of HBTs and in particular, for medium power devices.
303-306
Hall, S
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Buiu, O
9dd7ff2e-f202-4f7a-949b-00f7193c01bf
Lamb, A C
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El Mubarek, H A W
c4bc6a15-b00e-4b72-84e0-611d3d20fead
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Buiu, O
9dd7ff2e-f202-4f7a-949b-00f7193c01bf
Lamb, A C
7cac04a4-05a7-4fe5-a101-b3651b9dc5f9
El Mubarek, H A W
c4bc6a15-b00e-4b72-84e0-611d3d20fead
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Hall, S, Buiu, O, Lamb, A C, El Mubarek, H A W and Ashburn, P (2003) Current crowding effects in SOI-SiGe HBTs with low doped emitters. 33rd European Solid State Device Research Conference, Portugal. 16 - 18 Sep 2003. pp. 303-306 .

Record type: Conference or Workshop Item (Paper)

Abstract

Anomalous limitation of collector and base current in SOI SiGe HBTs at moderate bias levels is shown to be the result of current crowding and associated high injection effects induced by emitter de-biasing in the low doped emitter rather than in the base as is the case for homojunction transistors. Experimental results from devices with decreasing emitter window dimension, re-enforced by 2-D simulation, show clearly a trend for crowding at the centre as the emitter resistance increases. The results have significance for achieving full optimisation of HBTs and in particular, for medium power devices.

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More information

Published date: 2003
Additional Information: Event Dates: 16-18 September 2003
Venue - Dates: 33rd European Solid State Device Research Conference, Portugal, 2003-09-16 - 2003-09-18
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258695
URI: http://eprints.soton.ac.uk/id/eprint/258695
PURE UUID: 65dca64c-7a32-4375-b480-fde11efd0a9a

Catalogue record

Date deposited: 23 Dec 2003
Last modified: 16 Jul 2019 22:54

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Contributors

Author: S Hall
Author: O Buiu
Author: A C Lamb
Author: H A W El Mubarek
Author: P Ashburn

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