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Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation

Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation
Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation
This letter investigates the effect of a deep F+ implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185keV, 2.3 x 1015cm-2 F+ implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P+ implant, and in samples implanted with F+ only, the fluorine suppresses the boron thermal diffusion by 65 percent. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile.
0003-6951
4134-4136
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

El Mubarek, H.A.W. and Ashburn, P. (2003) Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation. Applied Physics Letters, 83 (20), 4134-4136. (doi:10.1063/1.1622434).

Record type: Article

Abstract

This letter investigates the effect of a deep F+ implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185keV, 2.3 x 1015cm-2 F+ implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P+ implant, and in samples implanted with F+ only, the fluorine suppresses the boron thermal diffusion by 65 percent. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile.

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Published date: 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258697
URI: http://eprints.soton.ac.uk/id/eprint/258697
ISSN: 0003-6951
PURE UUID: 9d0ce32b-c27c-4ea5-a97b-b210421712aa

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Date deposited: 23 Dec 2003
Last modified: 09 Dec 2019 20:16

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Contributors

Author: H.A.W. El Mubarek
Author: P. Ashburn

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