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Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs

Record type: Conference or Workshop Item (Other)

SiGe HBTs require low temperature processing in order to minimise boron out-diffusion from the base region. In this paper, a novel technique of producing low temperature in-situ doped single-crystal silicon emitters for application in SiGe HBTs is presented. The single-crystal silicon was deposited at a temperature of 670C in a UHV-compatible LPCVD cluster tool. Gummel plots of the fabricated transistors show very ideal base characteristics. An ultra low emitter resistance of 6.6ohm.um2 was also obtained. The very low emitter resistance is due to a very low oxygen dose of 5.3E13cm-2 at the single-crystal silicon emitter / silicon substrate interface.

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Citation

Abdul Rahim, A I, Marsh, C D, Ashburn, P and Booker, G R (2002) Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs At IEEE International Conference on Semiconductor Electronics, Malaysia. , pp. 226-229.

More information

Published date: 2002
Venue - Dates: IEEE International Conference on Semiconductor Electronics, Malaysia, 2002-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258698
URI: http://eprints.soton.ac.uk/id/eprint/258698
PURE UUID: 18bc045d-8a54-4a4d-945d-bc8cd20a5fcf

Catalogue record

Date deposited: 23 Dec 2003
Last modified: 18 Jul 2017 09:30

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Contributors

Author: A I Abdul Rahim
Author: C D Marsh
Author: P Ashburn
Author: G R Booker

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