Abdul Rahim, A I, Marsh, C D, Ashburn, P and Booker, G R
Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs
At IEEE International Conference on Semiconductor Electronics, Malaysia.
Full text not available from this repository.
SiGe HBTs require low temperature processing in order to minimise boron out-diffusion from the base region. In this paper, a novel technique of producing low temperature in-situ doped single-crystal silicon emitters for application in SiGe HBTs is presented. The single-crystal silicon was deposited at a temperature of 670C in a UHV-compatible LPCVD cluster tool. Gummel plots of the fabricated transistors show very ideal base characteristics. An ultra low emitter resistance of 6.6ohm.um2 was also obtained. The very low emitter resistance is due to a very low oxygen dose of 5.3E13cm-2 at the single-crystal silicon emitter / silicon substrate interface.
Conference or Workshop Item
|Venue - Dates:
||IEEE International Conference on Semiconductor Electronics, Malaysia, 2002-01-01
||Nanoelectronics and Nanotechnology
||23 Dec 2003
||17 Apr 2017 22:40
|Further Information:||Google Scholar|
Actions (login required)