Modeling of TED of boron in the underlying silicon layer due to boron implantation
Modeling of TED of boron in the underlying silicon layer due to boron implantation
Ion implantation's selectivity plays a very important role in forming the active device region of bipolar and MOS transistors. However the process of annealing for dopant activation causes problems of transient enhanced diffusion (TED) that make it difficult to realize sharp and shallow junction profiles. In this paper, measured and simulated boron profiles are compared for boron implants carried out at different energies.
324-328
Sabki, S N
ce9150a7-f1ed-4912-b1a8-50eafa505e3f
Hashim, M R
6987fcbb-8b46-4593-b812-3c8d06d8a6db
Aziz, A A
d7969bee-a208-49e7-a10a-e6a34200d5a9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2002
Sabki, S N
ce9150a7-f1ed-4912-b1a8-50eafa505e3f
Hashim, M R
6987fcbb-8b46-4593-b812-3c8d06d8a6db
Aziz, A A
d7969bee-a208-49e7-a10a-e6a34200d5a9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sabki, S N, Hashim, M R, Aziz, A A and Ashburn, P
(2002)
Modeling of TED of boron in the underlying silicon layer due to boron implantation.
IEEE International Conference on Semiconductor Electronics, Penang, Malaysia.
.
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Abstract
Ion implantation's selectivity plays a very important role in forming the active device region of bipolar and MOS transistors. However the process of annealing for dopant activation causes problems of transient enhanced diffusion (TED) that make it difficult to realize sharp and shallow junction profiles. In this paper, measured and simulated boron profiles are compared for boron implants carried out at different energies.
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Published date: 2002
Venue - Dates:
IEEE International Conference on Semiconductor Electronics, Penang, Malaysia, 2002-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258699
URI: http://eprints.soton.ac.uk/id/eprint/258699
PURE UUID: ca9e4e4a-c978-487a-8af4-c7db2a940bee
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Date deposited: 23 Dec 2003
Last modified: 08 Jan 2022 17:39
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Contributors
Author:
S N Sabki
Author:
M R Hashim
Author:
A A Aziz
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