Modeling of TED of boron in the underlying silicon layer due to boron implantation


Sabki, S N, Hashim, M R, Aziz, A A and Ashburn, P (2002) Modeling of TED of boron in the underlying silicon layer due to boron implantation At IEEE International Conference on Semiconductor Electronics, Malaysia. , pp. 324-328.

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Description/Abstract

Ion implantation's selectivity plays a very important role in forming the active device region of bipolar and MOS transistors. However the process of annealing for dopant activation causes problems of transient enhanced diffusion (TED) that make it difficult to realize sharp and shallow junction profiles. In this paper, measured and simulated boron profiles are compared for boron implants carried out at different energies.

Item Type: Conference or Workshop Item (Other)
Venue - Dates: IEEE International Conference on Semiconductor Electronics, Malaysia, 2002-01-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 258699
Date :
Date Event
2002Published
Date Deposited: 23 Dec 2003
Last Modified: 17 Apr 2017 22:40
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/258699

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