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Modeling of TED of boron in the underlying silicon layer due to boron implantation

Record type: Conference or Workshop Item (Other)

Ion implantation's selectivity plays a very important role in forming the active device region of bipolar and MOS transistors. However the process of annealing for dopant activation causes problems of transient enhanced diffusion (TED) that make it difficult to realize sharp and shallow junction profiles. In this paper, measured and simulated boron profiles are compared for boron implants carried out at different energies.

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Citation

Sabki, S N, Hashim, M R, Aziz, A A and Ashburn, P (2002) Modeling of TED of boron in the underlying silicon layer due to boron implantation At IEEE International Conference on Semiconductor Electronics, Malaysia. , pp. 324-328.

More information

Published date: 2002
Venue - Dates: IEEE International Conference on Semiconductor Electronics, Malaysia, 2002-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258699
URI: http://eprints.soton.ac.uk/id/eprint/258699
PURE UUID: ca9e4e4a-c978-487a-8af4-c7db2a940bee

Catalogue record

Date deposited: 23 Dec 2003
Last modified: 18 Jul 2017 09:30

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Contributors

Author: S N Sabki
Author: M R Hashim
Author: A A Aziz
Author: P Ashburn

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