TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950C
TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950C
The behaviour of fluorine in as-deposited polysilicon (p-Si) and as-deposited amorphous Si (a-Si) layers after annealing in the range 600-950C us investigated. The p-Si and a-Si were deposited by LPCVD at 610 and 560C, respectively, implanted with F (5E15cm-2, 30keV) and annealed. The microstructure and fluorine distributions were investigated by TEM and SIMS. The results show that at >=650C F segregates to form inclusions of similar size and shape in both as-deposited a-Si and p-Si, the amount of F in the layer decreases and at the interface increases with increasing temperature. For the same anneal, more F reaches the interface in p-Si than in a-Si. Mechanisms explaining the microstructure and F distributions are discussed.
Marsh, C D
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Nash, G R
b68b4787-1027-4975-b362-70dd55bc58ae
Schiz, J F W
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Booker, G R
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2001
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Nash, G R
b68b4787-1027-4975-b362-70dd55bc58ae
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D, Nash, G R, Schiz, J F W, Booker, G R and Ashburn, P
(2001)
TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950C.
Microscopy of Semiconducting Materials Conference, Oxford, United Kingdom.
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Abstract
The behaviour of fluorine in as-deposited polysilicon (p-Si) and as-deposited amorphous Si (a-Si) layers after annealing in the range 600-950C us investigated. The p-Si and a-Si were deposited by LPCVD at 610 and 560C, respectively, implanted with F (5E15cm-2, 30keV) and annealed. The microstructure and fluorine distributions were investigated by TEM and SIMS. The results show that at >=650C F segregates to form inclusions of similar size and shape in both as-deposited a-Si and p-Si, the amount of F in the layer decreases and at the interface increases with increasing temperature. For the same anneal, more F reaches the interface in p-Si than in a-Si. Mechanisms explaining the microstructure and F distributions are discussed.
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Published date: 2001
Additional Information:
Event Dates: 2001
Venue - Dates:
Microscopy of Semiconducting Materials Conference, Oxford, United Kingdom, 2001-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258706
URI: http://eprints.soton.ac.uk/id/eprint/258706
PURE UUID: 38253126-b43d-447a-90e2-9e49811ce65a
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Date deposited: 05 Mar 2004
Last modified: 10 Dec 2021 20:57
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Contributors
Author:
C D Marsh
Author:
G R Nash
Author:
J F W Schiz
Author:
G R Booker
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