Recent developments in deca-nanometer vertical MOSFETs
Recent developments in deca-nanometer vertical MOSFETs
We report simulations and experimental work relating to innovations in the area of ultra short channel vertical transistors. The use of dielectric pockets can reduce the short channel effects of charge sharing and bulk punchthrough, thickened oxide regions can reduce parasitic overlap capacitance in source and drain. A narrow bandgap SiGe source can reduce considerably the gain of the parasitic bipolar transistor which is particularly severe in vMOSFETs.
Hall, S
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Donaghy, D
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Buiu, O
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Gili, E
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Uchino, T
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Kunz, V D
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de Groot, C H
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Ashburn, P
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2003
Hall, S
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Donaghy, D
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Buiu, O
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Gili, E
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Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Kunz, V D
2974a8ef-fe2d-42f6-a7a8-7de682c5752a
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P
a0807f96-f15f-46a8-8b7b-3912d3b76ac7
Hall, S, Donaghy, D, Buiu, O, Gili, E, Uchino, T, Kunz, V D, de Groot, C H and Ashburn, P
(2003)
Recent developments in deca-nanometer vertical MOSFETs.
Insulating Films on Semiconductors Conference, Barcelona.
17 - 19 Jun 2003.
Record type:
Conference or Workshop Item
(Other)
Abstract
We report simulations and experimental work relating to innovations in the area of ultra short channel vertical transistors. The use of dielectric pockets can reduce the short channel effects of charge sharing and bulk punchthrough, thickened oxide regions can reduce parasitic overlap capacitance in source and drain. A narrow bandgap SiGe source can reduce considerably the gain of the parasitic bipolar transistor which is particularly severe in vMOSFETs.
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Published date: 2003
Additional Information:
Event Dates: 18-20 June 2003
Venue - Dates:
Insulating Films on Semiconductors Conference, Barcelona, 2003-06-17 - 2003-06-19
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258714
URI: http://eprints.soton.ac.uk/id/eprint/258714
PURE UUID: ca13f328-6a94-42db-a83e-3653680ea10b
Catalogue record
Date deposited: 05 Jan 2004
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
S Hall
Author:
D Donaghy
Author:
O Buiu
Author:
E Gili
Author:
T Uchino
Author:
V D Kunz
Author:
P Ashburn
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