Wang, Y, Waite, A, Cerrina, C, Hemment, P L F, Ashburn, P and Evans, A G R (2003) TEM study of solid phase epitaxial growth behaviour of normal and angled Si implanted gate stack structure. Microscopy of Semiconducting Materials Conference, Cambridge. 30 Mar - 02 Apr 2003.
Record type:
Conference or Workshop Item
(Poster)
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More information
Published date: 2003
Additional Information:
Event Dates: 31 March - 3 April
Venue - Dates:
Microscopy of Semiconducting Materials Conference, Cambridge, 2003-03-30 - 2003-04-02
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258715
URI: http://eprints.soton.ac.uk/id/eprint/258715
PURE UUID: cb7be98a-1eba-4f37-9b94-45a26808cce3
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Date deposited: 05 Mar 2004
Last modified: 10 Dec 2021 20:57
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Contributors
Author:
Y Wang
Author:
A Waite
Author:
C Cerrina
Author:
P L F Hemment
Author:
P Ashburn
Author:
A G R Evans
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