Recent developments in vertical MOSFETs and SiGe HBTs
Recent developments in vertical MOSFETs and SiGe HBTs
There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBTs in silicon on insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBTs with SOI-CMOS
vertical MOSFETs, HBT, SOI
26-34
Hall, Stephen
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Buiu, Octavian
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Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Szczepanski, P
a8fc1e3d-0e2c-4610-a158-f156f5c590bd
January 2004
Hall, Stephen
c2e5d7c3-2591-4c7a-83a3-976156ee35ba
Buiu, Octavian
32b4af9d-df11-47ae-a576-ffcbe814f789
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Szczepanski, P
a8fc1e3d-0e2c-4610-a158-f156f5c590bd
Hall, Stephen, Buiu, Octavian, Ashburn, Peter and de Groot, C.H.
,
Szczepanski, P
(ed.)
(2004)
Recent developments in vertical MOSFETs and SiGe HBTs.
Journal of Telecommunications and Information Technology, 1/2004 (1), .
Abstract
There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBTs in silicon on insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBTs with SOI-CMOS
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More information
Published date: January 2004
Keywords:
vertical MOSFETs, HBT, SOI
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258909
URI: http://eprints.soton.ac.uk/id/eprint/258909
PURE UUID: 4f3cdabc-6d75-4e65-9493-183a9cca061b
Catalogue record
Date deposited: 24 Mar 2004
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
Stephen Hall
Author:
Octavian Buiu
Editor:
P Szczepanski
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