Recent developments in vertical MOSFETs and SiGe HBTs

Hall, Stephen, Buiu, Octavian, Ashburn, Peter and de Groot, C.H., Szczepanski, P(ed.) (2004) Recent developments in vertical MOSFETs and SiGe HBTs Journal of Telecommunications and Information Technology, 1/2004, (1), pp. 26-34.


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There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBTs in silicon on insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBTs with SOI-CMOS

Item Type: Article
Keywords: vertical MOSFETs, HBT, SOI
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 258909
Date :
Date Event
January 2004Published
Date Deposited: 24 Mar 2004
Last Modified: 17 Apr 2017 22:38
Further Information:Google Scholar

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