The University of Southampton
University of Southampton Institutional Repository

Recent developments in vertical MOSFETs and SiGe HBTs

Hall, Stephen, Buiu, Octavian, Ashburn, Peter and de Groot, C.H., Szczepanski, P(ed.) (2004) Recent developments in vertical MOSFETs and SiGe HBTs Journal of Telecommunications and Information Technology, 1/2004, (1), pp. 26-34.

Record type: Article


There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBTs in silicon on insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBTs with SOI-CMOS

Full text not available from this repository.

More information

Published date: January 2004
Keywords: vertical MOSFETs, HBT, SOI
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 258909
PURE UUID: 4f3cdabc-6d75-4e65-9493-183a9cca061b
ORCID for C.H. de Groot: ORCID iD

Catalogue record

Date deposited: 24 Mar 2004
Last modified: 18 Jul 2017 09:29

Export record


Author: Stephen Hall
Author: Octavian Buiu
Author: Peter Ashburn
Author: C.H. de Groot ORCID iD
Editor: P Szczepanski

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton:

ePrints Soton supports OAI 2.0 with a base URL of

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.