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Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition

Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition
Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition
In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The selective growth conditions are established by varying the growth temperature and the proportion of dichlorosilane in the gas mixture. Highly selective silicon epitaxial layers with smooth morphology are obtained within a wide range of growth temperatures. No apparent local loading effect is observed. The use of both DCS and silanen provides a means to adjust the silicon growth rate by allowing independent control of etching and growth components of the overall chemistry makes it possible to increase the silicon on oxide incubation period, allowing the fabrication of devices where long epitaxial growth times are needed.
Selective epitaxial growth, Selectivity, Surface morphology, Low pressure chemical vapor deposition
514-518
Zhang, W
e7ac3aeb-ecaf-462b-80f4-91bae68ebf4f
Lloyd, N S
b37aa9e7-e478-40a8-9dbc-a72c63257cbe
Osman, K
b3fd9dc3-67d9-4711-a78a-7241e6d05039
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Zhang, W
e7ac3aeb-ecaf-462b-80f4-91bae68ebf4f
Lloyd, N S
b37aa9e7-e478-40a8-9dbc-a72c63257cbe
Osman, K
b3fd9dc3-67d9-4711-a78a-7241e6d05039
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S and Bagnall, D M (2004) Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition. Microelectronics Engineering, 73-74, 514-518.

Record type: Article

Abstract

In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The selective growth conditions are established by varying the growth temperature and the proportion of dichlorosilane in the gas mixture. Highly selective silicon epitaxial layers with smooth morphology are obtained within a wide range of growth temperatures. No apparent local loading effect is observed. The use of both DCS and silanen provides a means to adjust the silicon growth rate by allowing independent control of etching and growth components of the overall chemistry makes it possible to increase the silicon on oxide incubation period, allowing the fabrication of devices where long epitaxial growth times are needed.

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More information

Published date: February 2004
Keywords: Selective epitaxial growth, Selectivity, Surface morphology, Low pressure chemical vapor deposition
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 259418
URI: http://eprints.soton.ac.uk/id/eprint/259418
PURE UUID: 052dfe82-2b2e-4e10-99a0-9699c2fa18d5

Catalogue record

Date deposited: 04 Jun 2004
Last modified: 07 Jan 2022 23:57

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Contributors

Author: W Zhang
Author: N S Lloyd
Author: K Osman
Author: J M Bonar
Author: J S Hamel
Author: D M Bagnall

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