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Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition

Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S and Bagnall, D M (2004) Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition Microelectronics Engineering, 73-74, pp. 514-518.

Record type: Article


In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The selective growth conditions are established by varying the growth temperature and the proportion of dichlorosilane in the gas mixture. Highly selective silicon epitaxial layers with smooth morphology are obtained within a wide range of growth temperatures. No apparent local loading effect is observed. The use of both DCS and silanen provides a means to adjust the silicon growth rate by allowing independent control of etching and growth components of the overall chemistry makes it possible to increase the silicon on oxide incubation period, allowing the fabrication of devices where long epitaxial growth times are needed.

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Published date: February 2004
Keywords: Selective epitaxial growth, Selectivity, Surface morphology, Low pressure chemical vapor deposition
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 259418
PURE UUID: 052dfe82-2b2e-4e10-99a0-9699c2fa18d5

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Date deposited: 04 Jun 2004
Last modified: 18 Jul 2017 09:23

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Author: W Zhang
Author: N S Lloyd
Author: K Osman
Author: J M Bonar
Author: J S Hamel
Author: D M Bagnall

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