D'Halleweyn, N. V., Tiemeijer, L. F., Benson, J. and Redman-White, W.
A Charge Model for SOI LDMOST with Lateral Doping Gradient
At Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Japan.
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In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region and the overlap of the front gate over the drift region. The model has been implemented in SPICE3f5 and capacitance measurements are shown to agree well with the simulations.
Conference or Workshop Item
||Event Dates: June 2001
|Venue - Dates:
||Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Japan, 2001-06-01
||Nanoelectronics and Nanotechnology
||06 Sep 2004
||17 Apr 2017 22:23
|Further Information:||Google Scholar|
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