A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour
A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour
D'Halleweyn, N.
99ae9eea-2e92-4993-8f21-ab2f5133a00b
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Swanenberg, M.
89c54728-70bb-425a-862b-5672cee8db4a
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
2001
D'Halleweyn, N.
99ae9eea-2e92-4993-8f21-ab2f5133a00b
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Swanenberg, M.
89c54728-70bb-425a-862b-5672cee8db4a
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
D'Halleweyn, N., Benson, J., Swanenberg, M. and Redman-White, W.
(2001)
A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour.
Proceedings of the Electrochemical Society Meeting, Washington DC, United States.
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Published date: 2001
Additional Information:
Event Dates: March 2001
Venue - Dates:
Proceedings of the Electrochemical Society Meeting, Washington DC, United States, 2001-03-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 259897
URI: http://eprints.soton.ac.uk/id/eprint/259897
PURE UUID: 78d48541-e37e-4508-9899-3372671a661c
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Date deposited: 03 Sep 2004
Last modified: 10 Dec 2021 21:07
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Contributors
Author:
N. D'Halleweyn
Author:
J. Benson
Author:
M. Swanenberg
Author:
W. Redman-White
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