Circuit Simulator and Compact Model Requisites for Accurate Simulation of AC Floating Body Behaviour in PD SOI
Circuit Simulator and Compact Model Requisites for Accurate Simulation of AC Floating Body Behaviour in PD SOI
Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established the presence of frequency-dependent drain conductance behaviour below the onset of the kink effect (Howes and Redman-White, 1992). This is due to capacitive coupling, and is not related to self-heating (Caviglia and iliadis, 1992; Redman-White et al, 1992). As the conductances associated with the body node are extremely low in this region, we found that there are unexpected constraints on both the formulation of PD SOI compact models and their implementation in circuit simulation packages.
135-136
Benson, J.
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Redman-White, W.
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Easson, C. A.
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D'Halleweyn, N. V.
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Uren, M. J.
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1999
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Easson, C. A.
46590e60-35ec-4f26-b9c5-fa0cabae771a
D'Halleweyn, N. V.
813f4d26-2082-4c53-9d75-0c75fb5f1cd7
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710
Benson, J., Redman-White, W., Easson, C. A., D'Halleweyn, N. V. and Uren, M. J.
(1999)
Circuit Simulator and Compact Model Requisites for Accurate Simulation of AC Floating Body Behaviour in PD SOI.
SOI Conference, Rohnert Park, California, United States.
03 - 06 Oct 1999.
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established the presence of frequency-dependent drain conductance behaviour below the onset of the kink effect (Howes and Redman-White, 1992). This is due to capacitive coupling, and is not related to self-heating (Caviglia and iliadis, 1992; Redman-White et al, 1992). As the conductances associated with the body node are extremely low in this region, we found that there are unexpected constraints on both the formulation of PD SOI compact models and their implementation in circuit simulation packages.
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Published date: 1999
Additional Information:
Event Dates: 4th-7th October 1999
Venue - Dates:
SOI Conference, Rohnert Park, California, United States, 1999-10-03 - 1999-10-06
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 259911
URI: http://eprints.soton.ac.uk/id/eprint/259911
PURE UUID: 8f68cbbf-2a7c-4185-92a6-b2e8d20480c4
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Date deposited: 06 Sep 2004
Last modified: 08 Jan 2022 14:44
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Contributors
Author:
J. Benson
Author:
W. Redman-White
Author:
C. A. Easson
Author:
N. V. D'Halleweyn
Author:
M. J. Uren
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