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Integration of a two-dimensional electrostatic actuator in a new generation of atom chips

Integration of a two-dimensional electrostatic actuator in a new generation of atom chips
Integration of a two-dimensional electrostatic actuator in a new generation of atom chips
Summary: In this paper we present an integrated atom chip design which incorporates a micromachined electrostatic actuator for optical cavity alignment. The two-dimensional actuator is fabricated by applying deep reactive ion etching techniques (DRIE) on a silicon-on-glass wafer. An actution of 17.5 µm is achievable which is sufficient to compensate for the misalignment of the optical cavity during the fabrication process.
atom chip, actuator, electrostatic
Gollasch, C O
cf4d171f-2514-4982-a91f-931cc54bc793
Moktadir, Zak
2c4bc910-ec7b-40d0-8070-4fb45b173bcc
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Eriksson, S
6fd82ad3-19c6-40fa-8007-92f92c9e180f
Trupke, M
ff10fac6-8b4b-4f1e-91ad-855c5f1a0113
Hinds, E A
cd7a9dc5-438d-401b-9ad8-fa3ff9b787ff
Gollasch, C O
cf4d171f-2514-4982-a91f-931cc54bc793
Moktadir, Zak
2c4bc910-ec7b-40d0-8070-4fb45b173bcc
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Eriksson, S
6fd82ad3-19c6-40fa-8007-92f92c9e180f
Trupke, M
ff10fac6-8b4b-4f1e-91ad-855c5f1a0113
Hinds, E A
cd7a9dc5-438d-401b-9ad8-fa3ff9b787ff

Gollasch, C O, Moktadir, Zak, Koukharenko, Elena, Kraft, Michael, Bagnall, Darren, Eriksson, S, Trupke, M and Hinds, E A (2004) Integration of a two-dimensional electrostatic actuator in a new generation of atom chips. Eurosensors XVIII, Rome, Italy. 12 - 14 Sep 2004.

Record type: Conference or Workshop Item (Paper)

Abstract

Summary: In this paper we present an integrated atom chip design which incorporates a micromachined electrostatic actuator for optical cavity alignment. The two-dimensional actuator is fabricated by applying deep reactive ion etching techniques (DRIE) on a silicon-on-glass wafer. An actution of 17.5 µm is achievable which is sufficient to compensate for the misalignment of the optical cavity during the fabrication process.

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More information

Published date: 2004
Additional Information: Event Dates: 13 - 15 September 2004
Venue - Dates: Eurosensors XVIII, Rome, Italy, 2004-09-12 - 2004-09-14
Keywords: atom chip, actuator, electrostatic
Organisations: Nanoelectronics and Nanotechnology, EEE

Identifiers

Local EPrints ID: 259987
URI: http://eprints.soton.ac.uk/id/eprint/259987
PURE UUID: 58535e2e-14b7-4f03-8d7b-3cc968f2f9d5

Catalogue record

Date deposited: 10 Feb 2005
Last modified: 24 Jun 2020 16:34

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