Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14
Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14
El Mubarek, H A W
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Wang, Y
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Bonar, J M
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Hemment, P L F
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Ashburn, P
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April 2004
El Mubarek, H A W
c4bc6a15-b00e-4b72-84e0-611d3d20fead
Wang, Y
adc6c787-e577-46bf-bda7-740d56e7d554
Bonar, J M
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Hemment, P L F
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H A W, Wang, Y, Bonar, J M, Hemment, P L F and Ashburn, P
(2004)
Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14.
Material Research Society Symposium C Proceedings, MRS Spring Meeting, San Francisco.
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Published date: April 2004
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 260246
URI: http://eprints.soton.ac.uk/id/eprint/260246
PURE UUID: fac6d2d9-c317-4d58-8abf-db6af5747b86
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Date deposited: 14 Apr 2005
Last modified: 08 Jan 2022 05:45
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Author:
H A W El Mubarek
Author:
Y Wang
Author:
J M Bonar
Author:
P L F Hemment
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