Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
On-state and off-state performance of strained- Si–SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si–SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.
Drain current enhancement, mobility enhancement, n-MOSFETs, silicon-germanium (SiGe), strained-Silicon, thermal budget, transconductance enhancement, virtual substrate
1156-1163
Olsen, Sarah H.
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O'Neill, A.G.
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Driscoll, L.S.
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Chattopadhyay, S.
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Kwa, K.s.K.
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Waite, A.
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Tang, Y.T.
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Evans, A.G.R.
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Zhang, Jing
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July 2004
Olsen, Sarah H.
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O'Neill, A.G.
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Driscoll, L.S.
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Chattopadhyay, S.
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Kwa, K.s.K.
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Waite, A.
8377b573-54a6-4c2c-a38e-ac8dbac9f110
Tang, Y.T.
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Evans, A.G.R.
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Zhang, Jing
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Olsen, Sarah H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.s.K., Waite, A., Tang, Y.T., Evans, A.G.R. and Zhang, Jing
(2004)
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs.
IEEE Transactions on Elect Devices, 51 (7), .
(doi:10.1109/TED.2004.830656).
Abstract
On-state and off-state performance of strained- Si–SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si–SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.
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Published date: July 2004
Additional Information:
Y.T. Tang, A.M. Waite, C. Cerrina and A.G.R. Evans were with the Department of Electronics and Computer Science, University of Southampton.
Keywords:
Drain current enhancement, mobility enhancement, n-MOSFETs, silicon-germanium (SiGe), strained-Silicon, thermal budget, transconductance enhancement, virtual substrate
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260261
URI: http://eprints.soton.ac.uk/id/eprint/260261
PURE UUID: 03e3bc72-388a-473a-87b4-02c2107d71e9
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Date deposited: 18 Jan 2005
Last modified: 10 May 2024 16:56
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Contributors
Author:
Sarah H. Olsen
Author:
A.G. O'Neill
Author:
L.S. Driscoll
Author:
S. Chattopadhyay
Author:
K.s.K. Kwa
Author:
A. Waite
Author:
Y.T. Tang
Author:
A.G.R. Evans
Author:
Jing Zhang
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